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中国物理学会期刊

PtSi超薄膜厚度的一种检测方法研究

CSTR: 32037.14.aps.50.1447

STUDY ON A METHOD OF THE THICKNESS MEASUREMENT OF ULTRA-THIN PtSi FILM

CSTR: 32037.14.aps.50.1447
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  • 介绍了采用角分辨X-射线光电子解谱(angle resolved X-ray photoelectric spectrum(ARXPS))测试薄膜不同角度光电子能谱强度,计算电子平均自由程,从而计算出PtSi超薄膜厚度的方法,并给出其透射电子显微镜(TEM)晶格象验证结果.实验表明该方法简单易行,适用于其他超薄膜厚度的测量

     

    Based on X-ray photoelectron spectrum intensity measurements of thin film by ARXPS, a method of determination of the thickness of PtSi ultra-thin films through calculations of electrom mean free path, is described in this article.The result of calculation is in agreement with that of the TEM crystal lattice images analysis.It shows that the method is convenient and can be used to determine the thickness of other ultra-thin films.

     

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