The field dependence of voltage V(H) in a 2H-Nb0.9Ta0.1Se2 single crystal at various currents was measured and converted to current-voltage data V(I). Then the scaling law V=α(I-Ic)β was applied to extract the critical current Ic(H) and differential resistance Rd(H). The results show a peak on the differential resistance vs.H curve near Hc2 when the applied current is high, but for a lower current it appears near the onset of peak effect region. This indicates that the new types of pinning centers generated by doped Ta significantly alter the dynamic properties of the vortex system.