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中国物理学会期刊

Ta,Ta/Cu缓冲层对NiFe/Fe Mn双层膜交换偏置场的影响

CSTR: 32037.14.aps.50.2230

EFFECT OF Ta AND Ta/Cu BUFFERS ON THE EXCHANGE BIAS FIELD OFNiFe/FeMn BILAYERS

CSTR: 32037.14.aps.50.2230
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  • 采用磁控溅射方法制备了分别以Ta和Ta/Cu作为缓冲层的一系列NiFe/FeMn双层膜.实验发现,以Ta为缓冲层的NiFe/FeMn双层膜的交换偏置场比以Ta/Cu为缓冲层的NiFe/FeMn双层膜的交换偏置场大.测量了这两种双层膜的织构、表面粗糙度和表面成分.结果表明,以Ta/Cu为缓冲层时,Cu在NiFe层的上表面偏聚是造成NiFe/FeMn双层膜交换偏置场降低的重要原因.

     

    The NiFe/FeMn bilayers with different buffer layers (Ta or Ta /Cu) and Ta cover layers were prepared by magnetron sputtering. The results showed that the exchange bias field of NiFe/FeMn films with the Ta buffer was higher than that of the films with the Ta/ Cu buffer .We investigated the crystallographic texture, surface roughness and surface segregation, and demonstrated that the decrease of the exchange coupling field was caused by the Cu surface segregation in NiFe/FeMn films with Ta/ Cu buffer layers.

     

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