Cubic boron nitride (c-BN) films were synthesized using magnetically enhanced active reaction evaporation system in which pulsed DC technique was employed to enhance the formation of c-BN film. The effect of pulsed DC bias, plasma discharge current, Ar/N2 flow ratio, substrate temperature on the formation of c-BN films was investigated. The friction of c-BN phase in the film increased with the increase of pulsed DC negative bias and discharge current.Almost single phase c-BN films were obtained when deposited at-155V of pulsed DC bias,15A of discharge current,500℃ of substrate temperature and 10 of Ar/N2 flow ratio.