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中国物理学会期刊

辉光放电等离子体辅助XeCl准分子激光溅射沉积碳氮薄膜

CSTR: 32037.14.aps.50.2263

CARBON NITRIDE THIN FILMS PREPARED BY PULSED XeCl EXCIMERLASER DEPOSITION ASSISTED BY DC GLOW DISCHARGE

CSTR: 32037.14.aps.50.2263
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  • 利用直流辉光放电等离子体辅助的脉冲激光沉积技术在Si衬底上生长了碳氮薄膜.通过扫描电子显微镜、X射线衍射、X射线光电子能谱、俄歇电子能谱等多种手段,对薄膜的形貌、成分、晶体结构、价键状态等特性进行了分析和确定.结果表明,沉积薄膜为含有非晶SiN和晶态氮化碳颗粒结构,晶态成分呈多晶态,主要为α-C3N4相、β-C3N4相,晶粒大小为40—60nm.碳氮之间主要以C-N非极性共价键形式相结合.

     

    Carbon nitride thin films are deposited by combining XeCl pulsed laser deposition with additional dc glow discharge. The morphology, composition, structure and bonding status of the films are analyzed by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy. The results show that the deposited films are mainly composed of crystalline carbon nitride and amorphous silicon nitride. The carbon nitride in the film exist in mixed phases of α- and β-C3N4 and the crystalline grain size is in the range of 40—60nm, The XPS studies indicate that carbon atoms of the films are mainly bonded to nitrogen in sp3 C—N bonds while most of the nitrogen atoms are in N—Si bonds.

     

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