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中国物理学会期刊

纳米结构ZnxFe3-xO4-α-Fe2O3多晶材料中的巨隧道磁电阻效应

CSTR: 32037.14.aps.50.2275

GIANT TUNNELING MAGNETORESISTANCE IN NANOSTRUCTURED ZnxFe3-xO4-α-Fe2O3 POLYCRYSTALLINE MATERIAL

CSTR: 32037.14.aps.50.2275
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  • 在具有纳米绝缘层的多晶锌铁氧体体系中,当晶界为α-Fe2O3纳米量级(6—7nm)的绝缘层时,则构成(ZnxFe3-xO4)-α-Fe2O3非均匀体,高分辨电子显微镜已证实了这种微结构,该体系在0.5T磁场、4.2K温度下,磁电阻效应可达1280%,300℃下为158%.

     

    Giant tunneling magnetoresistance effect (TMR) as large as 1280% at 4.2K and 158% at 300K was observed in Zn0.41Fe2.59O4-α-Fe2O3 polycrystalline sample. The Zn0.41Fe2.59O4 grains are separated by insulating α-Fe2O3 thin layer boundaries, The pattern of nanostructure has been verified by TEM and HREM and the thickness of α-Fe2O3 boundary is about 6-7nm. The huge TMR is attributed to the high spin-polarization of Zn0.41Fe2.59O4 grains and insulating antiferromagnetic α-Fe2O3 thin layer. The ZnxFe3-xO4 ferrite is a new type half-metallic material with a huge TMR at room temperature is interesting to further study in future.

     

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