搜索

x
中国物理学会期刊

不同CHF3/CH4流量比下沉积a-C∶F∶H薄膜键结构的红外分析

CSTR: 32037.14.aps.50.2492

INFRARED ANALYSIS OF BOND CONFIGURATION FOR THE a-C∶F∶H FILMS DEPOSITED AT VARIABLE CHF3/CH4 FLOW RATIOS

CSTR: 32037.14.aps.50.2492
PDF
导出引用
  • 通过微波电子回旋共振等离子体化学气相沉积方法使用CH4/CHF3源气体制备a-C∶F∶H薄膜.红外结果表明,a-C∶F∶H薄膜随着流量比R=CHF3/CHF3+CH4)的变化存在结构上的演变,R64%时,薄膜表现为一个类聚四氟乙烯(PTFE)的结构,结构单体主要为CF2.同时这种结构上的变化影响着薄膜

     

    a-C∶F∶H films are prepared by microwave ECR plasma-enhanced chemical vapor deposition method at variable CHF3/CH4 gas flow raitos. The results from the Fourier transform-infra-red abserption for these films have shown that a structural evolution of the a-C∶F∶H film occurs at variable flow ratios R =CHF3/(CHF3+CH4). The main structure of the films is diamond-like carbon (DLC) characteristics for R less than 64%. The film presents a structure of PTFE-like as R is larger than 64%, where the dominant structural monomer is —CF2. Meanwhile, this structural evolution has also an influence on optical gap of the films. Optical gap decreases with the increase of flow ratios in the region of DLC-like characteristics, while increasing in the PTFE-like region. The transmittance of the a-C∶F∶H film is close to 100% for R larger than 92%.

     

    目录

    /

    返回文章
    返回