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中国物理学会期刊

基于VO2薄膜非致冷红外探测器光电响应研究

CSTR: 32037.14.aps.50.450

INFRARED RESPONSIVITY OF UNCOOLED VO2-BASED THIN FILMS BOLOMETER

CSTR: 32037.14.aps.50.450
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  • VO2薄膜是非致冷微测辐射热红外探测器热敏电阻材料.研究中应用微电子工艺制备了VO2溅射薄膜红外探测器,在296K的环境中测试了该探测器在不同的直流偏置、光调制频率下对873K标准黑体源8—12μm红外辐射的光电响应以及器件的噪声电压,在10和30Hz的调制频率下其响应率分别大于17kV/W和接近10kV/W.该探测器实现了探测率D大于1.0×108cm (Hz)1/2/W,热时间常量为0.011s的8—12μm非致冷

     

    VO2 thin films are used for uncooled microbolometer due to their high temperature coefficient of resistance.In this paper,on the basis of fabricating the uncooled bolometer based on VO2 sputtered thin films,the responsivity for the spectral range of 8-12μm region dependence on bias current and chopper frequency is studied.The result indicates that the responsivity is over 17kV/W and up to 10kV/W at a chopper frequency of 10 and 30Hz,respectively.The device having a detectivity D of exceeding 1.0×108cm (Hz)1/2/W and a thermal time constant of 0.011 seconds has been realized.

     

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