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中国物理学会期刊

重电子金属CeCu(6-x)Nix低温电阻与比热的研究

CSTR: 32037.14.aps.51.129
CSTR: 32037.14.aps.51.129
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  • 测量了重电子金属CeCu6-xNix(x=0,005,01,015,02)01K—250K的低温电阻和5K—70K低温比热,发现样品电阻的极大值温度随着掺Ni含量的增大而急剧下降,这一现象反映少数与Ni邻近的Ce离子在极低温下磁矩的加强和整个Ce离子点阵对导电电子相干散射的减弱.与此相反,低温电子比热系数γ在较低温度下近于常数,而在8K附近因有效质量变大而明显上升,但γ明显上升的温度,对Ni的含量却不敏感,表明绝大部分Ce离子的状况并未受到影响

     

    Inthispaper,theexperimentalresultsofthelow temperatureresistancebetween 0.1Kto 2 50Kandspecificheatbetween5Kto 70KofheavyfermioncompoundsCeCu6 xNix(x =0.0 ,0.0 5,0.1 ,0.15,0.2 )arereported .ThedopingeffectoftheNicontentonthelow temperaturepropertiesofCeCu6 isstudied .Thetemperaturesofresistancemaximuasofthesamplesreducedramaticallywiththeincreaseofthedopingcontentx.ThisindicatestheenhancementofmagneticmomentofminorCeionsthatareneighboringNiatomandthedecreaseofthecoherentscatteringbetweenthewholeCeionlatticeandtheconductionelectrons.Thelow temperatureelectronicspecificheatcoefficientγ(CE T ,whereCEistheelectronicspecificheat)isnearlyaconstantatlowtemperatures,butitapparentlyincreasesbelow 8Kduetotheincreaseofitseffectivemass.However,thetem peratureatwhichγbeginstoincreaseisnotsensitivetothecontentofNi,indicatingthatthestatusofmostceriumionsarenotaffected.

     

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