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中国物理学会期刊

CaCu3Ti4O12块材和薄膜的巨介电常数

CSTR: 32037.14.aps.52.1500

High dielectric constant in CaCu3Ti4O12 bulk an d thin films

CSTR: 32037.14.aps.52.1500
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  • 用固相反应法和脉冲激光沉积(PLD)制备了CaCu3Ti4O12块材和薄膜,获得了相对介电常数ε′(1kHz,300K)高于14000的介电特性,是目前该体系最好的结果.报道了(00l)取向高质量CaCu3Ti4O12外延薄膜及其介电性质.C aCu3Ti4O12相对介电常数ε′在100—300K温度范围 内

     

    CaCu3Ti4O12 bulk and thin films are prepared su ccessfully by solid-state reaction and pulsed laser deposition (PLD). Dielectric constants ε′ (1kHz,300K) higher than 14000 are found in both types of CaCu3Ti4O12 materials, which is the best result in this system. We first report the c-axis-oriented epitaxial CaCu3Ti4O12 thin film and i ts dieletric properties.Such a high dielectric constant does not depend much upon temperature in the range of 100-300K,showing that this material has high thermal stability.The behaviour of dielectric conductivity σd against frequency can be well ex plained in terms of the hopping mechanism.

     

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