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中国物理学会期刊

利用电泳法在金属基底上制备MgB2超导厚膜

CSTR: 32037.14.aps.52.1505

MgB2 thick films grown on metal substrates using the electrophoresis technique

CSTR: 32037.14.aps.52.1505
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  • 利用电泳技术在高熔点金属基底Ta,Mo和W上制备MgB2超导厚膜.厚膜中的MgB2晶粒结合紧密,粒度小于1μm,呈随机取向生长.电阻测量表明沉积在Ta,Mo,W上的MgB2厚膜的超导起始转变温度分别为36.5K,34.8K,33.4K,对应的转变宽度为0.3K,1.5K和2.0K.三种基底上制备的MgB2厚膜的临界电流密度在不同温度下随外磁场的变化情况 基本相同,MgB2/Mo厚膜的临界电流密

     

    MgB2 thick films were grown on metal substrates Ta, Mo and W using th e electrophoresis technique. The scanning electron microscopy and x-ray diffraction show that the grains in the MgB2 thick films are in random orientation wi th their size below 1μm. The onset temperatures of superconducting transition of MgB2/Ta,MgB2/Mo,MgB2/W are observed at 36.5, 34.8 and 33.4K, with the transition widths of 0.3, 1.5 and 2.0K, respectively. The critical current density of th e MgB2/Mo thick film at 5 K and 1T is more than 105 A/cm2. This n ew method provides a great potential for MgB2 in practical applicatio ns.

     

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