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中国物理学会期刊

高指数稳定硅表面的低能电子衍射图分析

CSTR: 32037.14.aps.52.156

Investigation of stable high-index silicon surfacesby means of LEED pattern analysis

CSTR: 32037.14.aps.52.156
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  • 报道了在系统搜寻稳定硅表面的过程中对四个稳定高指数表面Si(1,1,11),(1,0,8),(2,1,2)和(15,1,17)的低能电子衍射(LEED)图进行的分析和结果.这些表面经充分退火后都能给出属于各自表面的LEED图,而不是小面化的,说明它们都是稳定的.从它们的LEED斑点强度分布特征不仅可以推断(15,1,17)是主稳定表面,而(1,1,11),(1,0,8)和(2,1,2)则是副稳定表面,还能知道这些副稳定表面的原胞结构特征,甚至许多重要细节.从原胞结构特征来看,这些副稳定表面有可能用作生长周期量子线的模板.

     

    In the course of a systematic search for stable silicon surfaces, we have studied four stable high-index silicon surfaces, i.e., Si(1,1,11), (1 0 8), (2 1 2), and (15,1,17), by analyzing their low-energy electron diffraction (LEED) patterns. The results show not only that all these surfaces are stable but also that Si(15,1,17) is a major stable surface,whereas the rest three are minor stable surfaces, meaning that their unit cells consist of a nanometer facet of a major stable surface along with a double height step. In view of the periodic facet-step morphology of these minor stable surfaces, we suggest that these surfaces have the potential to be used as templates for growth of periodic nanowires of some suitable materials.

     

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