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中国物理学会期刊

氢化非晶硅薄膜中氢含量及键合模式的红外分析

CSTR: 32037.14.aps.52.169

Infrared analysis on hydrogen content and Si-H bonding configurations of hydrogenated amorphous silicon films

CSTR: 32037.14.aps.52.169
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  • Fourier红外透射(FTIR)谱技术是研究氢化非晶硅(a-Si∶H)薄膜中氢的含量(CH)及硅—氢键合模式(Si-Hn)最有效的手段.对用等离子体化学气相沉积(PCVD)方法在不同的衬底温度(Ts)下制备出的氢化非晶硅薄膜,通过红外透射光谱的基线拟合、高斯拟合分析,得到了薄膜中的氢含量,硅氢键合模式及其组分,并分析了这些参量随衬底温度变化的规律.

     

    The Fourier transform infrared (FTIR) spectrum is an effective technology for studying the hydrogen content (CH) and the silicon-hydrogen bonding configuration (Si-Hn) of hydrogenated amorphous silicon (a-Si∶H) films. In this paper, CH and Si-Hn of a-Si∶H films, fabricated at different substrate temperatures (Ts) by plasma enhanced chemical vapor deposition method, have been obtained by analyzing their FTIR spectra that are treated by baseline fitting and Gaussian function fitting. The effects of Ts on CH and Si-Hn are studied.

     

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