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中国物理学会期刊

高温退火对非晶CNx薄膜场发射特性的影响

CSTR: 32037.14.aps.52.1797

The effect of annealing on the field emission properties of amorphous CNx films

CSTR: 32037.14.aps.52.1797
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  • 采用射频磁控溅射方法在纯N2气氛中沉积了非晶CNx薄膜样品,并 在真空中退火至900 ℃.对高温退火引起的CNx薄膜化学成分、键合结构及其场发射特性方面的变 化进行研究.用傅里叶变换红外光谱和x射线光电子能谱分析样品的内部成分及键合结构的变化,其中sp2键及薄膜中N的含量与薄膜的场发射特性密切相关.退火实验的结果表明 高温退火可以导致CNx薄膜中N含量大量损失,并在薄膜中形成大量sp2<

     

    The carbon nitride films deposited by r.f. magnetron sputtering in pure N2 discharge were annealed in vacuum up to 900 ℃. The chemical composition and bonding structure of the films were studied using x-ray photoelectron spectroscopy, Fourier Transform Infrared. The effects of thermal annealing on the bonding structure and the electron field emission characteristics of CNx films wer e investigated. It is found that the sp2 bonds and N content in CNx films are closely related to the filed emission of CNx films. The results show that thermal annealing treatment causes a great loss of N content and a larger formation of sp2 bonds in CNx films, which would influence sign ificantly the field emission properties for the CNx films. The CNx films annealed at 750 ℃ show the optimal electron emission properties. Besides, the correlation between the chemical bonding structures and electron emission properties for the CNx films was also discussed.

     

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