搜索

x
中国物理学会期刊

立方体AgCl微晶中[Fe(CN)6]4-引入的浅电子陷阱阱深与俘获截面的动力学模拟

CSTR: 32037.14.aps.52.2649

The kinetics simulation of trap depths and capture cross sections of SETs in AgC l microcrystals doped with [Fe(CN)6]4- complex

CSTR: 32037.14.aps.52.2649
PDF
导出引用
  • 为了描述在晶体生长阶段掺入[Fe(CN)6]4-的立方体AgCl微晶中 光电子的产生与 衰减过程,建立了一种由三个固有中心和一个浅电子陷阱(SETs)组成的动力学模型,并引出一组微分方程.通过求解微分方程得到与实验结果相符合的光电子衰减曲线及其寿命.调整相 关模拟参数,于常温下得到由[Fe(CN)6]4-引入的SETs阱深为0.1 15eV,电子俘获截面为2.136×10-17cm2.

     

    To describe the photoelectron rise and decay process of AgCl microcrystals doped with [Fe(CN)6]4-, a kinetics model composed of three in trinsic centres and a shallow electron traps(SETs)is set up, and further more, a set of differential equations is deduced. By solving the differential equations, photoelectron decay curve and photoelectron lifetime that is in accord with the transient microwave photoconductivity experimental data are obtained. Adjusting related simulation parameters, the SET depths and capture cross sections at room temperature for [Fe(CN)6]4- are obtained and they are 0.115eV and 2 .136×10-17cm2, respectively.

     

    目录

    /

    返回文章
    返回