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中国物理学会期刊

量子点器件的三端电测量研究

CSTR: 32037.14.aps.52.677

Investigations of three-terminal electronic measurement on quantum dot devices

CSTR: 32037.14.aps.52.677
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  • 利用三端电测量方法,研究了调制掺杂二维电子气结构的量子点器件输运特性.报道了可分别测量二维电子气电阻和量子点隧穿电阻的实验方法.实验结果表明:量子点的横向耦合控制了量子点器件在小偏压下的电输运特性.

     

    Theree-terminal electronic measurements have been performed on quantum devices with a modulation-doped two-dimensional(2D) electron gas structure.The resistance with the 2D electron gas and that with the tunnel resistance through the dots can be obtained by analyzing the experimental data.Our results show that the lateral coupling between the quantum dots mainly determine the transport properties of the quantum dot devices under small biases.

     

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