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中国物理学会期刊

高质量纳米ZnO薄膜的光致发光特性研究

CSTR: 32037.14.aps.52.740

A study on photoluminescence characterization of high-quality nanocrystalline ZnO thin films

CSTR: 32037.14.aps.52.740
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  • 报道了利用低压-金属有机物化学气相沉积技术生长纳米ZnS薄膜,然后,将ZnS薄膜在氧气中于800℃温度下进行热氧化制备高质量纳米ZnO薄膜.x射线衍射结果表明,纳米ZnO薄膜具有六角纤锌矿多晶结构.室温下观察到一束强的紫外(3.26 eV) 光致发光和很弱的深能级发射.根据激子峰的半高宽度与温度的关系确定了激子-纵向光学声子(LO)的耦合强度(ГLO).由于量子限域效应使ГLO减少较多.

     

    In this paper, we report the photoluminescence from high-quality nanocrystalline ZnO thin films. The high-quality nanocrystalline ZnO thin films are prepared by thermal oxidation of ZnS films at 800℃, which are deposited by low-pressure metal-organic chemical vapor deposition technique. X-ray diffraction indicated that the nanocrystalline ZnO thin films have a polycrystalline hexagonal wurtzite structure. A strong ultraviolet emission peak at 3.26 eV was observed and the deep-level emission band was barely observable at room temperature. The strength (ΓLO) of the exciton-longitudinal-optical (LO)-phonon coupling is deduced from the temperature dependence of the full width at half maximum of the fundamental excitonic peak. ΓLO is reduced greatly due to the quantum confinement effect.

     

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