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中国物理学会期刊

ITO前驱物氢氧化铟In(OH)Zr3理论研究

CSTR: 32037.14.aps.53.1923

Study of indium trihydroxide In (OH)Zr3 for ITO

CSTR: 32037.14.aps.53.1923
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  • 分析了铟锡氧化物IT0(Indium Tin Oxide)前驱体氢氧化铟In(OH)3的结构,理论计算了其马德隆常数和晶格能,其值分别为2.9488和-5095.21kJ/mol, 并给出了晶核表面自由能近似公式和晶核生长率的近似表达式,进而计算了采用化学沉淀法制备In(OH)3纳米粉末时的晶核形成参数, In(OH)3晶核生长初期的生长率约为0.012nm/s.

     

    The structure of indium trihydroxide In(OH)3 for ITO(Indium Tin Oxide) has been analysed, the Madelung constant and lattice energy of In(OH)3 have been calculated, they are 2.9488 and -509521kJ/mol respectively, and a surface energy approximative expression is given, and then ulteriorly In(OH)3 crystal granule parameters are calculated in preparing nanosized In(OH)3 powder using the method of chemical precipitation,the growth rate 0.012nm/s about is given in this paper.

     

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