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中国物理学会期刊

Yb2.75C60价带光电子能谱

CSTR: 32037.14.aps.53.244

Valence band photoemission of Yb2.75C60

CSTR: 32037.14.aps.53.244
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  • 用角积分紫外光电子能谱技术测量了Yb2.75C60薄膜的价带电子态密度分布.相纯Yb2.75C60样品通过C1s芯态x射线电子谱峰的位移表征.结果表明Yb2.75C60是半导体,在费米能级处几乎没有电子态分布.Yb 6s电子态和C60LUMO能带的杂化效应不可忽略,有部分Yb 6s电子分布在Yb-C60杂化能带上.

     

    Valence-band electronic density of states of Yb2.75C60 thin films was measured by the ultraviolet photoemission spectrum technique. The phase-pure Yb2.75C60 sample was characterized by the C 1s XPS measurements. The result indicates Yb2.75C60 has no Fermi edge and thus is semiconductor. The hybridization between 6s state of Yb and the LUMO band of C60 cannot be considered to be negligible. Some Yb 6s electrons occupy the Yb-C60 covalent band in Yb2.75C60.

     

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