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中国物理学会期刊

Rb掺杂C60单晶的相衍变和电子态

CSTR: 32037.14.aps.53.248

Phase evolution and electronic states ofRb-intercalated C60 single crystals

CSTR: 32037.14.aps.53.248
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  • 在C60单晶超高真空解理面上制备C60的Rb填隙化合物薄膜.用同步辐射光电子能谱研究了相衍变过程.观察到对应于固溶相、Rb1C60和Rb3C60的电子态密度分布.当数纳米厚Rb3C60薄膜在C60单晶(111)解理面形成后,室温条件下进一步沉积Rb至样品表面不产生fcc到bct或bcc结构相变.C60

     

    Rb-intercalated C60 thin film was prepared on the cleaved (111) surface of C60 single crystal under the ultra-high-vacuum condition. Phase evolution was studied by the synchrotron radiation photoemission technique. The energy distribution curves for the solid solution phase, Rb1C60 and Rb3C60 phases were observed. After the Rb3C60 thin film with a thickness of nanometers has formed on the surface layers of the C60 single crystal, the excess depositions of Rb do not induce the bulk-like fcc to bct or bcc structure transitions at room temperature. The large size of C60 molecule offers the surface vacancies for the formations of Rb4C60 and Rb5C60 adsorption phases that are further verified by Rb 3d core-level photoemission measurements. Valence band photoemission results exhibit that the surface phases are metallic.

     

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