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中国物理学会期刊

铁电体SrBi2Nb2O2电子能带结构的第一性原理研究

CSTR: 32037.14.aps.53.2931

Electronic band structure of ferroelectric SrBi2Nb2O9

CSTR: 32037.14.aps.53.2931
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  • 采用第一性原理的方法计算了SrBi2Nb2O.9(SBN)的顺电相、铁电相的电子结构.顺电相是间接带隙, 铁电相是直接带隙,它们的大小分别为1.57和2.23 eV.顺电相和铁电相的价带顶均主要来自于O2p态的贡献.而顺电相和铁电相的导带底则分别来自Nb4d态和Bi6p态的贡献.计算表明SBN铁电相的低的漏电流与Bi 6p轨道有关.由顺电相到铁电相时,Nb4d和O2

     

    The electronic band structures of SrBi2Nb2O.9 (SBN) in both the ferroelectric and paraelectric phases were calculated using firstprinciples method. The paraelectric phase is of an indirect band gap of 1.57eV ; whereas the ferroelectric phase is of a direct band gap of 2.23eV. The valence band maxima of both the paraelectric and ferroelectric phases are mainly contributed from O2p states; while the conduction band minima are from Nb4dand Bi6p states. When transforming from the paraelectric to the ferroelectric phases, the strong hybridization between Nb4d and O2pand BiO(2) hybridization enhance the distortion of NbO6poctahedra and reduce the total energy of the system,in favor of stabilizing the ferroelectric phase. The calculation shows that the low leak current in SBN is related to Bi6p state.

     

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