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中国物理学会期刊

LT-GaAs飞秒光电导之电场响应特性

CSTR: 32037.14.aps.53.3010

Response characteristic of femtosecond LT-GaAs photoconductive switches at different voltage bias

CSTR: 32037.14.aps.53.3010
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  • 利用飞秒光电导自相关技术研究了LTGaAs飞秒光电导开关时间随外加偏置电场的变化规律 .实验结果显示当外加偏置电场从0.5×104 V/cm 上升到9.5×104 V/cm 时,光电导 开关时间开始在200fs附近缓慢变化再迅速增加到750fs.这是由于随着外加电场增加,Fren kel-Poole效应导致的EL2缺陷中心库仑吸引势垒降低和电场增强的碰撞电离效应显著增强 ,导致载流子俘获截面减小,载流子寿命增加之故.

     

    The response characteristic of a LTGaAs photoconductive switch formed in a cop lanar waveguide at different voltage bias is studied with photocurrent autocorre lation measurement technique. The experimental results show that the switching t ime increases from ~200fs to ~750fs, when the bias voltage ascends from 0.5×104 to 9.5×104 V/cm. This phenomenon is attributed to the increase of carr ier capture time arising from the potential barrier lowering (FrenkelPoole eff ect) and the fieldenhanced thermal ionization.

     

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