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利用飞秒光电导自相关技术研究了LTGaAs飞秒光电导开关时间随外加偏置电场的变化规律 .实验结果显示当外加偏置电场从0.5×104 V/cm 上升到9.5×104 V/cm 时,光电导 开关时间开始在200fs附近缓慢变化再迅速增加到750fs.这是由于随着外加电场增加,Fren kel-Poole效应导致的EL2缺陷中心库仑吸引势垒降低和电场增强的碰撞电离效应显著增强 ,导致载流子俘获截面减小,载流子寿命增加之故.
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关键词:
- 光电导自相关技术 /
- 载流子俘获时间 /
- Frenkel-Poole效应 /
- 电子碰撞电离效应
The response characteristic of a LTGaAs photoconductive switch formed in a cop lanar waveguide at different voltage bias is studied with photocurrent autocorre lation measurement technique. The experimental results show that the switching t ime increases from ~200fs to ~750fs, when the bias voltage ascends from 0.5×104 to 9.5×104 V/cm. This phenomenon is attributed to the increase of carr ier capture time arising from the potential barrier lowering (FrenkelPoole eff ect) and the fieldenhanced thermal ionization.-
Keywords:
- photocurrent autocorrelation technique /
- carrier capture time /
- FrenkelPoole effect /
- fieldenhanced thermal ioniza tion







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