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中国物理学会期刊

Fe/Si多层膜的层间耦合与界面扩散

CSTR: 32037.14.aps.53.3920

The antiferromagnetic coupling and interface diffusion in Fe/Si multilayers

CSTR: 32037.14.aps.53.3920
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  • 对以本征Si及重掺杂p型和n型Si作为中间层的Fe/Si多层膜的层间耦合进行研究,并通过退火,增大Fe,Si之间的扩散,分析界面扩散对层间耦合的影响. 实验结果表明,层状结构良好的制备态的多层膜,Fe,Si之间也存在一定程度的扩散,它是影响层间耦合的 主要因素,远远超过了半导体意义上的重掺杂,使不同种类的Si作为中间层的层间耦合基本 一致.进一步还发现,在一定范围内增大Fe,Si之间的扩散,即使多层膜的层状结构已经有了相当的退化,Fe/Si多层膜的反铁磁耦合强度基本保持不变.

     

    The antiferromagnetic coupling in Fe/Si multilayers was investigated with spa cers varying from pure Si to heavy-doped n-type and p-type Si. It was found that interlayer diffusion between Fe and Si occurred even though the multilayers sho wed well-defined layer structure, and the diffusion dominated the hea vy-doped Si, which made no difference at all for the antiferromagnetic coupl ing with different type of Si. Furthermore, the antiferromagnetic coupling in Fe/Si multi lay ers still goes on while the diffusion between Fe and Si layers enhanced and the layer structure was degraded to some extent after annealing.

     

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