In this paper, static state and quasistatic state models of quantum well channel hole sheet density of SiGe pmetaloxidesemiconductor with δ doping layer are established and analyzed. The relations between hole sheet density and δ dopinglayer concentration, between holesheetdensity and undoping layer hickness at static state are also discussed, and the relations of the threshold voltage to the δ doping layer concentration, the quantum well channel hole sheet density and the thickness of the undoping layer are discussed. At last, the relation of the quantumwell channel hole sheet density to gate voltage for the quasistatic state is discussed.