Boron-doped (B-doped) silicon nanowires have been successfully synthesi zed by plasma-enhanced chemical vapor deposition (PECVD) at 440℃ using silane as the Si source, diborane(（B2H6）) as the dopant gas and Au as the catalyst. It is desirable to extend this technique to the growth of silicon nanowire pn jun ctions because PECVD enables immense chemical reactivity.