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中国物理学会期刊

La2/3Ca1/3MnO3薄膜的光致电阻率变化特性

CSTR: 32037.14.aps.53.587

The change of photo-induced resistivity properties in La2/3Ca1/3MnO3 thin films

CSTR: 32037.14.aps.53.587
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  • 射频磁控溅射法制备了La2/3Ca1/3MnO3纳米薄膜(LCMO).该薄膜发生FM-PM相变的转变点温度为Tc≈308K(近似为电阻峰值温度Tp);在不同温度下的光电导性质实验表明所制备的LCMO薄膜在连续激光作用时低温段(Tc)表现为光致电阻率增大效应,即ΔR/R>0,并在R-T曲线拐点附近取得极大值,(ΔR/R)max=43.5%;当T>T 

    Photo-induced resistivity change p has been studied in perovskite manganite La2/3Ca1/3MnO3 thin films with a continous wave laser and modulated laser pulses in this paper. Experimental results show that in the sample films, the maximum of photo-induced resistivity change(ΔR/R)max can reach 43.5%,which is a very exciting figure in this research field. Modulated laser pulse induced signal intensity has a highly nonlinear relation with the applied current and temperature. The maximum of photo-induced resistivity increase is a second power function of the applied current, while the temperature at which the maximum appears is proportional to the bias current. There exist an optimal bias current and a temperature for optical response in this film. These results are attributed to the optical excited eg↓ carriers and polarons.

     

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