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中国物理学会期刊

单根纳米导线场发射增强因子的计算

CSTR: 32037.14.aps.54.1347

Calculation of the enhancement factor for the individual conductive nanowire in field emission

CSTR: 32037.14.aps.54.1347
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  • 利用镜像电荷模型,对静电场中单根纳米导线尖端的电势和电场进行计算,得到纳米导线发射体尖端场增强因子表达式为β0=h/ρ+35. 若考虑极板间距对场增强因子的影响,则场增强因子的表达式调整为β=〖SX(〗h〖〗ρ〖SX)〗+35+A〖JB((〗〖SX(〗h〖〗d〖SX)〗〖JB))〗3,其中h,ρ分别为纳米导线的长度和半径,d为极板间距,A为常数. 结果表明纳米导线的长径比对场增强因子的影响最显著,而极板间距对纳米导线的场增强因子只有微弱影响,随极板距离的增加而减小.

     

    The potential and the electric field at the end of the individual nanowire under an electric field were calculated with the image charge model. With the nanowire as a field emitter, the enhancement factor was given by the expression: β0=h/ρ+35. Taking into account the influence of the anode_cathode distance, the enhancement factor at the end of the nanowire could be adjusted based on the equation: β=h/ρ+35+A(h/d)3, where h and ρ are the length and the radius of the nanowire respectively; d is the anode_cathode distance and A is a constant. From the above results, it is concluded that the aspect ratio is the most important factor for the nanowire emitter and the anode_cathode distance also slightly influence the enhancement factor of the nanowire in field emission, and the enhancement factor increases with the decrease of the anode_cathode distance.

     

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