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中国物理学会期刊

PEN薄膜阻抗转变规律研究

CSTR: 32037.14.aps.54.1396

Study on impedance transition of PEN thin film

CSTR: 32037.14.aps.54.1396
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  • 采用真空蒸发的方法制备了PEN材料薄膜,研究了不同外电路参数下薄膜的电双稳特性.发现薄膜从高阻向低阻转变过程所需时间随电流非线性下降,此期间薄膜阻抗也呈现非线性,并对非线性规律作了数据拟合.发现整个跃变过程中存在一种能量效应,即当外加电压超过某一阈值时,该跃迁所需的能量不变.

     

    PEN films were prepared by vacuum deposition. Their electrical bistable properties were studied under conditions of various circuit parameters.A decrease of time needed for impedance transition with increasing circuit current was observed. The film impedance showed a nonlinear characteristics and then data fitting was done for the nonlinearity. Furthermore, an energy effect was found during the transition, i.e. when the applied voltage exceeds a threshold, the energy consumption keeps invariable.

     

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