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中国物理学会期刊

硅纳米孔柱阵列及其四氧化三铁复合薄膜的湿敏电容特性研究

CSTR: 32037.14.aps.54.2220

Capacitive humidity-sensing properties of Si-NPA and Fe3O4/Si-NPA

CSTR: 32037.14.aps.54.2220
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  • 报道了硅纳米孔柱阵列(Si-NPA),Fe3O4复合的Si-NPA(Fe 3O4/Si-NPA)两种薄 膜材料的制备方法并对其形貌和结构进行了表征,研究了其电容湿度传感特性.结果表明,S i-NPA,Fe3O4/Si-NPA均为微米/纳米结构复合体系.当环境相对湿 度从11%上升到95% 时,采用100 Hz的信号频率进行测试,以Si-NPA和Fe3O4/Si-NPA 为电介质材料制成的湿 敏元件的电容增加值分别为起始值的1500%和5500%;采用1000 Hz的信号频率测试时,则 分别为起始值的800%和12000%,显示出两种材料较高的湿度灵敏性和较强的绝对电容输出 信号强度.同时,在升湿和降湿过程中,Si-NPA,Fe3O4/Si-NPA都 具有较快的响应速度 ,其响应时间分别为15 s,5 s和20 s,15 s.文章结合材料的形貌和结构特性对其物理机理 进行了分析.上述结果表明,Si-NPA无论是直接作为湿度薄膜传感材料还是作为复合薄膜湿 度传感材料的衬底都具有很好的前景.

     

    The preparation of silicon nanoporous pillar array (Si-NPA) and Fe3O 4 coated Si-NPA (Fe3O4/Si-NPA) is presented. The morphologies and microstructures of the two kinds of thin films were characterized and their corresponding capacit ive humidity sensing properties investigated. It was shown that both Si-NPA and Fe3O4/Si-NPA are typical micron/nanometer structural compo site systems. When the relative humidity increased from 11% to 95%, the capacitances reached 1500% and 5500% of their initial values measured with 100 Hz signal frequency, and 800% and 12000% measured with 1000 Hz signal frequency, for Si-NPA and Fe3O4/S i-NPA, respectively. At the same time, both of the two thin films exhibited quic k response speed, the response times in the humidity-increment and humidity-decr ement processes were determined to be 15 s and 5 s for Si-NPA, and 20 s and 15 s for Fe3O4/Si-NPA, respectively. These excellent humidity sensing properties of Si-NPA and Fe3O4/Si-NPA are explained based on thei r corresponding morph ological and structural properties. Our experiments strongly indicated that Si-N PA is an ideal thin film both for direct humidity sensing and as a substrate for growing composite humidity sensing materials.

     

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