The recombination dynamics of localized exciton in ZnS1-xTex ternary alloys has been investigated by time-resolved photoluminescence (PL) in a large Te concentration range from 0005 to 085. It is found that the radiativ e recombination lifetimes of different Te isoelectronic centers show a significa nt difference, varying from a few nanoseconds to tens of nanosecond. The lifetim e reaches a maximum of ～ 40 ns in the sample of x=015. The present result s could be understood in terms of the exciton localization effect. When the Te c oncentration is small, the Te isoelectronic centers evolve gradually from a sing le Te impurity (Te1) to the Te clusters (Ten). The exciton localization is enhanced, resulting in the increase of exciton recombination lifetime. When t he Te concentration is further increased, the Te clusters (Ten) becom e lar ge enough to hybridize the Te localized states and the host valence band states. Therefore, the excitons bound to Te isoelectronic centers become more or less d elocalized, resulting in a shorter lifetime. Furthermore, the concentration depe ndence of the exciton binding energy and the PL intensity variation with tempera ture have been mearsured. The results further confirm the above conclusion.