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中国物理学会期刊

MgB2超导薄膜的微波测量

CSTR: 32037.14.aps.54.2325

Microwave measurements of the MgB2 thin film

CSTR: 32037.14.aps.54.2325
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  • 报道了利用蓝宝石介质谐振器技术测量MgB2超导薄膜的微波表面电阻Rs、0K时的穿透深度λ(0)和超导能隙Δ(0).λ(0)和Δ(0)的值是通过先测量样品穿透深度λ(T)的变化量Δλ(T),然后由BCS理论模型拟合Δλ(T)的实验数据得到的.测试样 品是利用化学气相沉积技术在MgO(111)基片上制备的c轴织构的MgB2超导薄膜, 薄膜的超导转变温度和转变宽度分别为38K和01K.微波测试结果表明在10K,18GHz下M gB2薄膜的Rs约为100μΩ,可以和高质量的YBCO薄膜的Rs值相比拟;BCS理论拟合得到的MgB2超导薄膜的λ(0)=102nm,Δ(0)=113k Tc.

     

    We have measured the microwave surface resistance Rs, the magnetic fi eld penetration depth λ(0) and the energy gap Δ(0) of MgB2 thin film s using the dielectric resonator technique. The c_axis textured sample, with superconducting transition temperature of 38K and transition width of 01K, w as prepared on MgO(111) substrates by the chemical vapor deposition method. The Rs value of the MgB2 thin film at 10K was found to be as low as 100 μΩ, which is comparable to that of a high_quality high_temperature thin film o f YBCO. BCS fits of the temperature dependence of Δλ of the MgB2 t hin film gave λ(0)=102nm and Δ(0)=113kTc.

     

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