Planar Hall effect(PHE) in Ta(8nm)/NiFe(7nm)/Cu(2.4nm)/NiFe(4.4nm)/FeMn(14nm)/Ta(6nm) spin valve multilayer have been measured in magnetic fields rotating in the film plane. A “mixed” effect of the free and pinned layers on anisotropic magnetoresistance (AMR) has been obtserved. The result shows that the PHE can give more information about the magnetic configurations of the spin valve multilayers than the usual MR measurements.