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中国物理学会期刊

复合层状Bi7Ti4NbO21铁电陶瓷的结构与介电和压电性能研究

CSTR: 32037.14.aps.54.2346

Microstructure, dielectric and piezoelectric properties of mixed-layered Bi7Ti4NbO21 ferroelectric ceramics

CSTR: 32037.14.aps.54.2346
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  • 制备了Bi7Ti4NbO21,Bi4Ti3O12及Nb掺杂Bi4Ti3O12(Nb-Bi4Ti3O12)层状结构铁电陶瓷材料.结合Nb-Bi 4Ti3O12的介电温谱和 退极化实验结果,研究了Bi7Ti4NbO21的晶体结构 对其介电、压电性能的影响 .高分辨透射电镜结果表明,在Bi7Ti4NbO21中, 沿着c轴方向,(Bi2Ti3O10)2-和(BiTiNbO7)2-两个类钙钛矿层分别 与(Bi2O2)2+层叠加堆积而成.这种晶体结构决定了Bi7Ti4NbO21的 介电温谱在668℃和845℃出现介 电双峰.结合极化样品的退化实验分析,说明材料在这两个温度附近发生了铁电—铁电相变 、铁电—顺电相变,分别是(Bi2Ti3O10)2-和(BiTiNbO7)2-层状 结构发生微观结构相变的结果.在退极化过程中,由于受热时钙钛矿层内空位引起的缺陷偶 极子的定向排列受到破坏,引起材料部分退极化,表现为300℃热处理后Bi7Ti 4NbO 21的压电活性降低了10%,显示了室温下材料的压电性能来源于自发极化的固有电 偶极子和缺陷偶极子的共同贡献.

     

    Bi7Ti4NbO21, Bi4Ti3O 12 and Nb-doped Bi4Ti3O12 la yer-structure ferroelectric ceramics were prepared. Microstructure, dielectric and piezoelectric properties of Bi7Ti4NbO21 were investigated by comparing with the electrical properties of Bi4Ti3O12 and Nb-doped Bi4Ti3O12. High resolution transmission electron microsco py result of Bi7Ti4NbO21 showed an intergrowth structure of perovskite -like(Bi2Ti3O10)2-, (BiTiNbO7)2- layers and (Bi 2O2)2+ layer along c direction. Two dielectric anomalies of Bi7Ti4NbO 21 occurred at 668 and 845℃. The material underwent a ferroelectric-ferroelectric and a ferroe lctric-paraelectric phase transition at the low and high temperatures. They were attributed to the microstructure transition of (Bi2Ti3O10)2- an d (BiTiNbO7)2- perovskite layers, respectively. During the depolarizat ion, the piezoelectric coefficient d33 of Bi7Ti 4NbO21 decrease d by 10% of its initial value over 200℃. The reason was that the directional ar rangement of defect dipoles created by some vacancies was damaged. The results o f depolarization experiment and thermally stimulated current measurement indicat ed that the piezoelectric properties of Bi7Ti4NbO 21 came from the polarization of intrinsic dipoles and defect dipoles.

     

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