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中国物理学会期刊

Bi80+辐射复合过程的计算

CSTR: 32037.14.aps.54.2625

Radiative recombination processes of Bi80+

CSTR: 32037.14.aps.54.2625
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  • 基于Dirac-Slater自洽场方法,计算了Bi79+离子从低能到高能的光电离截面以及其逆过程Bi80+的辐射复合截面; 分析了Kramers公式的适用性;考察了多极效应 、相对论效应在不同能区对辐射复合截面的影响;计算了Bi80+离子在电离阈值附近 的辐射 复合截面和辐射复合速率系数,考察了自由电子分布函数及电子的温度变化对速率系数的影 响,并将计算结果同高精度的储存环合并束实验进行了对比.

     

    The Dirac_Slater method is used to calculate the photoionization cross sections of Bi79+ from low to high energy. The numerical results are compared with those calculated by the quasi_classical Kramers formula, and the validity of Kra mers formula is analyzed. The relativistic effects and multipole contributions o f the photoionization processes are also discussed. For the comparison with the merged_beam rate coefficients, the theoretical rate coefficients were evaluated with the experimental electron_velocity distribution function(characterized by t he temperatures) parallel and perpendicular to the electron_beam direction. Thou gh the effects of relativity are considered in the present work, the measured ra te coefficients exceed our results in the energy range close to the threshold.

     

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