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稀释磁性半导体Sn1-xMnxO2的室温铁磁性

物理学报, 2005, 54(6): 2934-2937.
DOI: 10.7498/aps.54.2934
CSTR: 32037.14.aps.54.2934

Room-temperature ferromagnetism in Mn-doped SnO2 diluted magnetic semiconductor

Acta Phys. Sin., 2005, 54(6): 2934-2937.
DOI: 10.7498/aps.54.2934
CSTR: 32037.14.aps.54.2934
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  • 摘要

    采用固相反应法，制备了不同成分的稀释磁性半导体Sn1-xMnxO 2(x=002，004，006)．利用x射线衍射和傅里叶变换红外光谱法证明 了锰均匀地掺杂到二氧化锡中．在室温下研究了掺锰二氧化锡基稀释半导体的磁性，发现它具有明显的铁磁性 ，同时对磁性的强弱与锰的含量和烧结温度的关系作了研究．

     

    Abstract

    Using the solid_state diffusion method, a series of Sn1-xMnxO2(x=002—006) diluted magnetic semiconductors(DMSs) are fabricated.By u sing x_ray diffraction(XRD) measurements and Fouier transform infrared spectrosc opic(NEXUS870) analyses,a uniform Mn distribution in the SnO2 is conf irmed. An obvious ferromagnetism in Mn_doped SnO2 DMS at room temperature is f ound and the ferromagnetism is weak with the increase of Mn concentration.

     

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