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通过MOD法在Si(100)和Pt(111)/Ti/SiO2/Si基片上制备出LaNiO3 ( LNO)薄膜.再通过修 正的Sol-gel法，在Pt(111)/Ti/SiO2/Si,LNO/Si(100)和LNO/Pt/Ti/SiO2/Si三种衬底上 制备出具有择优取向的Pb(Zr0.52Ti0.48)O3铁电薄膜. 经XRD分析表明，L NO薄膜具有(100)择优取向的类钙钛矿结构；PZT薄膜均具有钙钛矿结构，且在Pt(111)/Ti/S iO2/Si衬底上的薄膜以(110)择优取向，在LNO/Pt/Ti/SiO2/Si和LN O/Si(100)衬底上的 薄膜以(100)择优取向.经场发射SEM分析和介电、铁电性能测试表明，在LNO/Si和LNO/Pt/Ti /SiO2/Si衬底上的PZT薄膜的平均粒径、介电常数以及剩余极化强度均比以Pt/T i/SiO2/Si为衬底的薄膜大.LaNiO3 (LNO) thin films were successfully prepared on Si (100) and Pt /Ti/SiO 2/Si substrates by metalorganic decomposition (MOD). Pb(Zr0.52Ti0.48)O3（ＰZＴ） thin films were prepared on the Pt( 111)/Ti/SiO2/Si, LNO/Si (100) and LNO/Pt(111)/Ti/SiO2/Si substrates by a modified sol-gel met hod. The crystallographic orientation and the microstructure of the resulting PZT thin f ilms on the different substrates were characterized by x_ray diffraction and sca nning electron microscopy. The dielectric and ferroelectric properties of PZT fi lms on the different substrates are discussed. The PZT films deposited on LNO/Pt /Ti/SiO2/Si and LNO/Si（100） substrates show strong ［100］ preferre d orient ation, while the films deposited on Pt/Ti/SiO2/Si substrates show ［1 10］ ori entations. PZT films on LNO/Pt/Ti/SiO2/Si and LNO/Si(100) substrates have lar ger average grain sizes, dielectric constant and remnant polarizations compared with those grown on Pt/Ti/SiO2/Si substrates.
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Keywords:
- LaNiO3 thin film /
- PZT ferroelectric thin film /
- preferred orientation /
- remnant polarization
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中国物理学会期刊
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