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中国物理学会期刊

p型纳米硅与a-Si:H不锈钢底衬nip太阳电池

CSTR: 32037.14.aps.54.2945

NIP a-Si:H solar cells on stanless steel with p-type nc-Si:H window layer

CSTR: 32037.14.aps.54.2945
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  • 报道了选用厚度为0.05mm的不锈钢箔作衬底,B掺杂P型氢化纳米硅作窗口层,制备成功开路 电压和填充因子分别达到090V和070的nip非晶硅基薄膜单结太阳电池.UV-VIS透射谱和 微区Raman谱证实所用p层具有典型氢化纳米硅的宽能隙和含有硅结晶颗粒的微结构特征.明 确指出导致这种氢化纳米硅能隙展宽的物理机制是量子尺寸效应.

     

    The successful application of boron_doped hydrogenated nanocrystalline silicon a s window layer in a-Si∶H nip solar cells on stainless steel foil with a thickne ss of 005mm is reported. Open circuit voltage and fill factor of the fabricate d solar cell were 090V and 070 respectively. The optical and structural prop erties of the p-layers have been investigated by using UV-VIS and Raman spectros copy. It is confirmed that the p-layer is hydrogenated nanocrystalline silicon w ith a wide optical gap due to quantum size effect.

     

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