Understanding of the transient response of electronegative radio-frequency glow plasmas is important for process control, better selectivity etch technology and charge free etching. We have investigated the step responses of RF(1356MHz) silane gas plasmas at a pressure of 05 Torr(05×10333Pa). The result showed that, when the power voltage changed stepwise from 550V to 350V, a steady sta te pulsed plasma oscillation at a few kHz appeared. The transient behavior and o scillation were interpreted in terms of the transport and chemistry of charge ca rriers in the plasma.