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中国物理学会期刊

CoSi电子结构第一性原理研究

CSTR: 32037.14.aps.54.328

First-principles study of electronic structure for CoSi

CSTR: 32037.14.aps.54.328
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  • 采用基于第一性原理的密度泛函理论全势线性扩展平面波法,首先对CoSi的晶胞参数进行优化计算,CoSi多粒子系统的最低能量为-134684297Ry,此时其晶胞处于最稳态,与最稳态对应的晶胞体积V0等于5899360a.u.3,晶胞参数为a=b=c=04438nm;然后计算了优化后的CoSi的电子结构及Si侧Al掺杂的CoSi075Al025的电子结构并分析了两者的电子结构特征,计算的CoSi电子能态密度与已有的计算结果整体形貌相同,但存在局部差异,Al掺杂后费米面发生了偏移;最后探讨了两者的电子结构对热电性能的影响,Al掺杂可提高CoSi的材料参数B,因此有望提高其热电性能.

     

    In this paper, by using the linearized augmented plane wave based on the density functional theory of the first principles, the parameters of a unit cell were o ptimized for CoSi firstly. The steady state energy of a many-particle system was -134684297Ry. The corresponding volume and lattice parameter of the unit cell in the steady state were 5899360a.u.3 and 04438nm respectively. Secondly, the calculations of the electronic structures for CoSi and CoSi075A l025 were performed. At the same time, the characteristics of electronic structures of CoSi and CoSi075Al025 were analyzed. The shape of density of states of CoSi in this paper is almost the same as that of the exist ing calculations except for some differences. The Fermi level of CoSi075 Al025 shifted slightly, compared with that of CoSi. Finally, the int rinsic relations between the electronic structures of CoSi and CoSi075Al 025 and their respective thermoelectric properties were discussed in det ail. The increase of material factor B of CoSi075Al025 w as attributed to the doping with Al. Therefore, doping was a practicable means t o improve the thermoelectric property of CoSi.

     

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