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中国物理学会期刊

压电调制反射光谱研究GaAs/Al0.29Ga0.71As单量子阱

CSTR: 32037.14.aps.54.3337

Piezomodulated-reflectivity study of GaAs/Al0.29Ga0.71As single quantum well

CSTR: 32037.14.aps.54.3337
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  • 报道了压电调制反射测量系统的建立,应用该系统获得了势阱宽度分别为5nm和25nm的两个G aAs/Al0.29Ga0.71As单量子阱的压电调制反射谱. 从图谱中可以看 出,在室 温下能够较容易地分辨出和轻、重空穴相关联的子带跃迁. 在阱宽25nm的样品中还观察到了 自旋-轨道跃迁. 利用有效质量理论近似计算,对量子阱样品的图谱结构进行了指认,发现 实验值和计算值能够较好地符合.

     

    We report here that we have built a set of piezomodulated-reflectivity measureme nt system, and obtained piezomodulated-reflectivity spectra of two GaAs/Al0 .29 Ga0.71As single quantum well samples in which the well widths a re 5 and 25nm respectively. From these spectra, the transitions between electron and heavy and light hole subbands can be easily identified. Furthermore, we have ob served the optical transition related to spin-orbit split-off of GaAs buffer. Ef fective mass theory is applied to calculate the transition energy between electr on and hole subbands. Then the spectral structures are assigned based on the cal culated results. It is found that these calculated results agree with experiment al ones very well.

     

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