In this paper the low-temperature metal-induced unilaterally crystallized (MIUC ) polycrystalline silicon thin-film transistors (TFTs) have been developed and c haracterized. These TFTs have higher field-effect mobility, lower off-state curr ent and better spatial uniformity. A new structure of gate-modulated lightly dop ed drain of TFT was proposed. It is very effective to lower gate-induced drain-l eakage current of the TFTs when a higher source drain voltage is applied to it. This type MIUC TFT is suitable to fabricate active matrices for liquid crystal and organic light-emitting diode flat-panel displays on large area glass substr ates.