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中国物理学会期刊

Ti1-xCoxO2铁磁性半导体薄膜研究

CSTR: 32037.14.aps.54.369

Study of ferromagnetic semiconductor films: Ti1-xCoxO2

CSTR: 32037.14.aps.54.369
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  • 利用射频磁控反应溅射制备了Ti1-xCoxO2薄膜样品.超导量子干涉仪(SQUID)测量了样品在常温,低温下的磁特性.结果显示样品在常温下已经具有明显的铁磁性.常温时其矫顽力32×103A/m,饱和磁化强度55emu/cm3磁性元素的磁矩达0679μB/Co.饱和场12×104A/m.x射线衍射(XRD)和x射线光电子能谱(XPS)实验分析初步表明样品中没有钴颗粒.

     

    Co-doped TiO2 ferromagnetic semiconductor flms were prepared by rf co-sputteri ng method and then annealed in vacuum at 300℃ for 2 h. Superconducting quantum interference device (SQUID) measurements indicate that the samples are ferromagn etic and the Curie temperature is above 300K. The saturation magnetization, coer civity, and saturation field are 55emu/cm3, 400×80A/m and 1500×80A/m at room temperature, respectively. And the magnetic moment was observed to be 0679 μB/Co. No pure Co metal grains were found by x-ray diffraction and x-ray p hotoemission spectroscopy measurements.

     

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