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中国物理学会期刊

Hg1-xCdxTe分子束外延薄膜晶格参数与组分关系的研究

CSTR: 32037.14.aps.54.3726

Relationship between lattice parameters and compositions of molecular beam epitaxial Hg1-xCdxTe films

CSTR: 32037.14.aps.54.3726
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  • 高分辨率x射线衍射技术被应用于Hg1-xCdxTe分子束外延薄膜晶格 参数的测量及其晶格应变状态的研究,研究发现Hg1-xCdxTe分子束外延薄膜 内既存在正应变也存在剪切应变. 通过应用晶体弹性理论,对Hg1-xCdx Te分子束外延薄膜的应变状态进行了定量的分析与计算,获得了Hg1-xCd xTe 分子束外延薄膜在完全弛豫状态下的晶格参数,从而得到了Hg1-xCdxTe分子束外延薄膜晶格参数与组分的关系,该关系符合Vegard’s定律,而不是早期研究所给出的Hig gins公式. 研究还发现,根据对称衍射测量所得到的(224)晶面间距,可直接计算出Hg 1-xCdxTe分子束外延薄膜晶格参数,并用Vegard’s定律确定组分的方 法,可作为估算Hg1-xCdxTe分子束外延材料组分的常规技术,其 组分的测量误差在0.01左右.

     

    High_resolution x_ray diffraction technology is applied to the measurement of la ttice parameters and the study of strain for Hg1-xCdxTe fi lms gr own by molecular beam epitaxy. The results show that there exist both perpendicu lar strain and shear strain in Hg1-xCdxTe films. Based on crystal elastic theory, strain states in Hg1-xCdxTe films are analyz ed and calculated, and the lattice parameters of 1-xCdxTe film s at the relaxation state are obtained. It is found that the relationship betwee n lattice parameters and compositions of Hg1-xCdxTe films agrees with Vegard's law, rather than Higgins formula proposed in earlier research. It is also found that the lattice parameters can be derived from the measured data of (224) plane spacing, and that the compositions of Hg1-xCdxTe films can also be evaluated by using Vegard's law with an error about 0 01.

     

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