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高In组分InxGa1－xN/GaN多量子阱材料电致荧光谱的研究

物理学报, 2005, 54(8): 3905-3909.
DOI: 10.7498/aps.54.3905
CSTR: 32037.14.aps.54.3905

Study on electroluminescence spectra of InxGa1－xN/GaN-MQWs materials with high indium contents

Acta Phys. Sin., 2005, 54(8): 3905-3909.
DOI: 10.7498/aps.54.3905
CSTR: 32037.14.aps.54.3905
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  • 摘要

    研究了高In组分InxGa1-xN/GaN（x≈30%）多量子阱（MQWs）结构 发光二极管样品在不同注入电流下的电致荧光（EL）谱及反常的双峰现象.结果表明：有源区 内建电场在外界电流注入条件下逐渐受屏蔽，这一效应在高In组分InxGa1 -xN/GaN MQWs材料的发光复合机理中占有重要地位.

     

    Abstract

    In this work, the abnormal double-peak in the electroluminescence spectra of In xGa1-xN/GaN multiple quantum wells (MQWs) light emitting d iode s tructure materials with high indium contents was studied under different injecti on currents. The results show that the screening of internal electric field by i njection current plays an important role in the radiation recombination process of InxGa1-xN/GaN-MQWs materials.

     

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