A series of microcrystalline silicon thin films were fabricated by very high frequency plasma-enhanced chemical vapor deposition at different substrate temperat ures (Ts). Analysis of materials structure was conducted using Fourie r tra nsform infrared (FTIR). The results showed that hydrogen content of the samples decreased with the increase of Ts. The results of FTIR and secondary ion m ass spectra indicated that the oxygen content of the samples increased with the increase of Ts. Compared with those at higher Ts, samples prepared at low Ts easily adsorbed oxygen, and showed bad stability.