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中国物理学会期刊

各向异性量子点单光子发射的高偏振度特性

CSTR: 32037.14.aps.54.4141

High polarization properties of single-photon emission from anisotropic InGaAs quantum dots

CSTR: 32037.14.aps.54.4141
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  • 研究了线偏振脉冲光场激发下,单个各向异性InGaAs量子点的高偏振光发射. 给出其偏振因子与两个正交本征态之间的交叉弛豫之间的关系式. 分析表明,交叉弛豫随激发场强度增大,并导致偏振因子随激发场入射脉冲面积减小.

     

    The high-polarized single-photon emission in single anisotropic InGaAs quantum d ots excited by linear pulse excitation was discussed. The expression of the pola rization and cross relaxation between two orthogonal eigenstates was given. It w as revealed that the cross relaxation increased with intensity of the excitation , which resulted in the decrease of polarization factor with the input pulse a rea.

     

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