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中国物理学会期刊

γ-LiAlO2晶体生长、改性和热学性质研究

CSTR: 32037.14.aps.54.4269

Study on the growth, modification and thermal properties of γ-LiAlO2 single crystals

CSTR: 32037.14.aps.54.4269
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  • 采用快速提拉法生长出了透明、完整的γ-LiAlO2晶体,但是晶体的高熔点和易 挥发性限制了γ-LiAlO2晶体质量.采用气相传输平衡法(vapor transport equilibra tion technique,VTE)工艺对晶体改性,半高宽(FWHM)值从1169arcsec降至442arcsec,继续升高VTE处理温度至1300℃,FWHM值反而升高至552arcsec.快速提拉法生长出来晶体,100]方向和[001]方向的热膨胀系数分别为172398×10-6/K,107 664×10-6/K.经过三步VTE处理后[100]和[001]方向热膨胀系数降至16 6539×10-6/K和101784×10-6/K.

     

    Transparent and crack-free γ-LiAlO2 single crystal was grown by quic k Czochra lski technique. However, high melting point and easy volatilization degraded the quality of the crystal. The fall with at half maximum(FWHM) value dropped from 1169arcsec to 442arcsec when the crystal was modified by vapor transport equ ilibrium(VTE) technique. But when the temperature of VTE was 1300℃, the FWHM va lue increased to 552arcsec. The [100]-orientation thermal expansion coeffici ent of the as-grown crystal was 176798×10-6/K, while that alon g the [0 01]-orientation was 107664×10-6/K. After three VTE treatments , the cor responding thermal expansion coefficients decreased to 166539×10-6/K and 101784×10-6/K, respectively.

     

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