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中国物理学会期刊

射频磁控溅射法生长MgxZn1-xO薄膜的结构和光学特性

CSTR: 32037.14.aps.54.4309

Structural and optical properties of MgxZn1-xO thin films deposited by radio frequency magnetron sputtering

CSTR: 32037.14.aps.54.4309
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  • 用射频磁控溅射法在80℃的衬底温度下制备出MgxZn1-xO(0≤x ≤030)薄膜.x射线 衍射(XRD)结果表明,MgxZn1-xO薄膜为单相六角纤锌矿结构, 没有形成任何显著 的MgO分离相,MgxZn1-xO薄膜的择优取向平行于与衬底垂直的 c轴;c轴晶格常数随着Mg含量的增加逐渐减小.在MgxZn1-xO薄膜的光透射谱中出现 锐利的吸收边,由透 射谱估算出MgxZn1-xO薄膜的带隙宽度由332eV(x=0)线性地 增加到396eV(x=030).

     

    MgxZn1-xO films(0≤x≤030) have been prepared on sap phire substrates by radio frequency magnetron sputtering at a substrate tempera ture of 80℃. Optical and structural properties of the MgxZn1-x O films were studied using transmittance and x-ray diffraction (XRD)spect ra. XRD patterns indicate that the MgxZn1-xO films have he xagonal wurtzite single-phase structure of ZnO and a preferred orientation with the c-axis perpendicular to the substrates without any significant formation o f a separated MgO phase. The c-axis lattice constant of the MgxZn1-xO films decreases gradually with increasing Mg content. Sharp absorp tion edge appeared in the transmittance spectra of the MgxZn1-x O films, the fundamental band gap of the MgxZn1-xO f ilms were estimated, which increases almost linearly from 3.32 eV at x=0 to 3.9 6 eV at x=030

     

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