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中国物理学会期刊

三萘基膦在Ag(110)面上沉积的紫外光电子能谱研究

CSTR: 32037.14.aps.54.4319

UPS study of tri(β-naphthyl) phosphine overlayer on Ag(110)

CSTR: 32037.14.aps.54.4319
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  • 利用紫外光电子能谱(UPS)对新型有机半导体三萘基膦(TNP)在金属Ag(110)表面上沉积生长及其电子性质等进行了研究.三萘基膦的价带谱峰分别位于费米能级以下38,63,93和110 eV处,其中,价带顶 (HOS)位于费米能级以下约25 eV处.清洁Ag(110)表面的功函数为43 eV.随着三萘基膦在Ag(110)表面的沉积,功函数减小到38 eV,并达到饱和.根据UPS的测量结果,给出了三萘基膦/Ag(110)界面的能带结构,且三萘基膦与衬底Ag之间呈弱相互作用行为.

     

    Ultraviolet photoelectron spectroscopic(UPS) measurements of the tri (β-naphthyl) phosphine (TNP) film deposited on the Ag(110) surface were made. The TNP derived valence features are located at 38,63,93and 110 eV below Fermi level, and the top of the highest occupied molecular orbital(HOMO) of TNP is located at 25 eV in binding energy. The work function of Ag(110) is about 43 eV, and upon deposition of TNP, the work function decreases to the saturated value of 38 eV. Based on the UPS measurements, the energy level alignment at the interface of TNP/Ag(110) is given, and the results indicate a weak interaction between TNP and the Ag substrate.

     

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