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中国物理学会期刊

太阳电池用本征微晶硅材料的制备及其结构研究

CSTR: 32037.14.aps.54.4874

Fabrication of intrinsic microcrystalline silicon thin films used for solar cells and its structure

CSTR: 32037.14.aps.54.4874
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  • 采用VHF-PECVD技术制备了系列不同硅烷浓度和反应气压的微晶硅薄膜.运用拉曼散射光谱和 x射线衍射对制备的材料进行了结构分析.在实验研究的范围内,制备材料的晶化程度随硅烷 浓度的增加而降低.XRD的测试结果表明:制备的微晶硅材料均体现了(220)方向择优.应用在 电池的有源层中,制备出了效率达7.1%的单结微晶硅太阳电池,电池的结构是glass/ZnO/p( μc-Si:H)/i(μc-Si:H)/n(a-Si:H/Al),没有ZnO背反射电极,有源层的厚度仅为1.2μm.

     

    Microcrystalline silicon thin films used for solar cells were deposited at different silane concentrations and reaction pressures by VHF-PECVD.Study of materials structure was conducted by Raman spectra and x-ray diffraction. In the range of experiment, microcrystalline silicon thin films prepared under different cond itions all have (220) preferential orientation. Microcrystalline silicon solar c ells with conversion efficiency up to 7.1% were fabricated. The structure of sol ar cells was glass/ZnO/p(μc-Si:H)/i(μc-Si:H)/n(a-Si:H/Al). There was no Zno ba ck reflector and the thickness of solar cells was only 1.2μm.

     

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